Symposium K is the second in a series of SiC symposia at the MRS Fall Meeting. Since the last meeting in 2000, advances in SiC materials, processing, and device design have resulted in implementation of SiC-based electronic systems and offer great promise in high voltage, high temperature, high frequency applications. Presenters focused on new developments in the basic science of SiC materials as well as rapidly maturing device technologies. The ...
Substituted 1,3-disilacyclobutanes were studied as potential low temperature single-source CVD precursors to silicon carbide. These studies were carried out in a cold-wall LPCVD system maintained at a total reactor pressure of 1.0 Torr using a mass flow controlled argon carrier gas. The precursor was decomposed on resistively heated Si(100) substrates at temperatures ranging from 700 C - 1100 C. Gas chromatography-Fourier transform infrared spectroscopy and quadrupole mass spectrometry were used ...
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