We present results on growth and fabrication experiments of AlN/AlGaN superlattices for ultraviolet "UV" optoelectronic devices. Superlattices with extremely short periods have been studied. The AlN ?barrier? layers are 0.5 nm thick, and the AlxGa1-xN ?wells? are 1.25 nm thick, with x ~ 0.08. This combination gives an average AlN mole fraction of 0.63 across one full period. The superlattice periods, AlN mole fractions, and energy gaps are determined using ...
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