TbFe2 film prepared by a flash evaporation system onto Si(100) or polyamide substrate have been irradiated with different Ar ion doses at zero, 1. 3x10-17 and 2.7x10-17 ions/cm2 and at 10 kV. Magnetostrictive properties of TbFe2 film with disordered structure, saturated magnetostriction and magnetostrictive susceptibility, improved by Ar ion beam irradiation due to increasing of in-plane compressive stress.
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