InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1-xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and heterostructure design for enhancing transistor performance are studied systematically. Different amounts of biaxial compression are ...
In(sub x)Ga(sub 1-x)Sb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets (CBO/VBO) with lattice matched Al(sub x)In(sub 1-x)Sb for heterostructure MOSFET design and allow low thermal budget MOSFET fabrication. While buried channel HEMT-like devices with excellent electron and hole transport have been demonstrated, realization of an Sb-channel MOSFET has remained elusive due to the highly reactive nature of the ...
Reports by Author
