We recently reported the CVD growth of binary Ge(1-y)Sn(y) and ternary Ge(1-y)Si(x)Sn(y) alloys directly on Si wafers using SnD(4), Ge(2)H(6) (di-germane), SiH(3)GeH(3), and (GeH(3))(2)SiH(2) sources. Ge(y)Sn(y) is an intriguing infrared material that undergoes an indirect-to-direct bandgap transition for y < 0.1. In addition, we have found that Ge(1-y)Sn(y) layers have ideal properties as templates for the subsequent deposition of other semiconductors: (a) they are strain-relaxed and have low threading-defect densities ...
The work performed using support from this grant has focused on the following: (1) the development of ZrB2 buffer layers and Si-Ge-Sn compliant templates grown directly upon Si (100), and (2) the demonstration of these systems in mismatched heteroepitaxy of tetrahedral semiconductors including III-V compounds and group IV materials with Si substrates.
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