Two high-temperature modules. one of p-i-n SiC diodes and one ofjunction barrier Schottky SiC diodes. were fabricated on AtN. Material choice, thermal conductivity, compatibility, design, and performance are discussed. A curve tracer measured each diode on a module for forward and reverse current versus voltage. Diodes in parallel were measured for reverse recovery charge and time, at different currents and to 150 deg C substrate, including operation in a DC-to-DC ...
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