Aerosol-Assisted Chemical Vapor Deposition (AACVD) has been used to attain high deposition rates (1000 A/min, up to 800 A/min at 140 deg C) of Cu films at low temperatures (120-200 deg C) from toluene solutions of (hfac)Cu(1, 5-COD) in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk (1.7-3.5 micro omega cm). Activation energies calculated from the deposition rate as a function of the preheating temperature ...
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