We have studied the structure of Sb-terminated GaAs(001) surfaces using reflection high energy electron diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy (STM). Clean, As-terminated (2*4) surfaces were prepared by molecular beam epitaxy and then exposed to Sb4 at 490 C, producing a (2*8)-reconstructed surface terminated with ~1 ML of Sb. Re-heating such a surface to 460 C in vacuum returns the surface to a (2*4) reconstruction with approximately 0.5 ...
We have studied the magnetic and structural properties of epitaxial bcc Fe(001) films grown at 175 C on molecular-beam epitaxy-prepared GaAs(001)-2*4 and -c(4*4) reconstructed surfaces, with film thicknesses ranging up to ~30 ML (~43 ). We present measurements of the thickness-dependent evolution of the magnetic properties of the Fe films as determined by in situ magneto-optic Kerr effect. We find that the magnetic properties and growth mode are similar for ...
Sensitivities of the positive resists polymethylmethacrylate (PMMA) and diazonapthoquinone sulfonate-novolac (Shipley System 9) have been determined at an exposure wavelength of 140 A. Using thin transmissive support membranes of silicon and polycrystalline diamond, absorbance spectra have been measured over the wavelength range of 80 - 360 A for several resist film thicknesses. The resulting linear absorption coefficients, a, are found to agree with values calculated from published mass absorption coefficients ...
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