A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a mid-infrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy (MBE) and exhibited an intense long-wavelength electroluminescence at 3.12 micrometers (300 K). A II-VI MBE growth initiation with a thin ZnTe buffer layer prior ...
In summary SQW and MQW structures of different thicknesses (2-10 nm) based on a new II-VI compositional material Be(x)Cd(1-x)Se with a Be content ranging from 33% to 50% have been grown by MBE using different growth modes. The structures have demonstrated bright PL up to room temperature and no phase separation phenomena in the vicinity of x = 0.46 corresponding to a composition lattice-matched to GaAs. Large energy gap bowing ...
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