| Accurate Characterization of Free Carrier Refraction in InP (Postprint) |
Feb 2010 |
7 pages |
| Authors:
Leonel P Gonzalez; Shekhar Guha; SRINIVASAN KRISHNAMURTHY; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH MATERIALS AND MANUFACTURING DIRECTORATE
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 | Using recently published results of intrinsic and free carrier nonlinear absorption coefficients in InP, nonlinear refraction was investigated at 1.064 micrometers using nanosecond duration lasers to characterize refraction from generated free carriers. A phase retrieval algorithm was implemented to determine the amplitude and phase profiles of the incident beam. Accurate spatial and temporal profiles of the incident field were used to model nonlinear propagation through and beyond the sample. With ... |
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| Accurate Evaluation of Nonlinear Absorption Coefficients in InAs, InSb and HbCdTe Alloys (Postprint) |
06 JUN 2007 |
15 pages |
| Authors:
Shekhar Guha; Zhi G. Yu; SRINIVASAN KRISHNAMURTHY; Leonel P. Gonzales; SRI INTERNATIONAL MENLO PARK CA
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| We present a full band structure calculation of temperature- and wavelength-dependent two-photon absorption (TPA) coefficients and free carrier absorption (FCA) cross sections in InAs, InSb, and Hg1−xCdxTe alloys. Although the wavelength dependence of the TPA coefficients agrees well with Wherrett expression, the accurately calculated values are smaller by a factor of 1.2 to 2.5. In addition, the TPA coefficient depends sensitively on the photoexcited carrier density in small gap material. ... |
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| High Intensity Light Propagation in InAs (Preprint) |
JUN 2006 |
11 pages |
| Authors:
Shekhar Guha; Leo Gonzalez; SRINIVASAN KRISHNAMURTHY; Zhi G. Yu; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SURVIVABILITY AND SENSOR MATERIALS DIV/HARDENED MATERIALS
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| We present our experimental and theoretical results on nonlinear absorption of light in InAs. The nonlinear variation of output intensity as a function of input intensity and time are calculated by solving four coupled rate equations simultaneously. All required quantities, including two-photon absorption, free-carrier absorption, Auger and radiative recombination lifetimes, and intrinsic carrier densities, have been obtained from the underlying band structures. The calculated thickness and energy-dependent output intensities in ... |
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| EFFECT OF DONORS ON THE HOLE LIFETIMES IN INFRARED MATERIALS, |
JAN 1998 |
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| Authors:
SRINIVASAN KRISHNAMURTHY; A. SHER; A. B. CHEN; SRI INTERNATIONAL MENLO PARK CA
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 | (U) THIS PAPER SHOWS CALCULATIONS OF FULL BAND STRUCTURE BASED AUGER RECOMBINATION RATES IN SMALL GAP SEMICONDUCTOR ALLOYS. THE FIRST-ORDER COULOMB INTERACTIONS AND SECOND-ORDER ELECTRON-ELECTRON INTERACTIONS COUPLED THROUGH OPTICAL PHONONS ARE CONSIDERED. RESULTS OF CALCULATIONS OF LIFETIMES OF DIFFERENT DETECTOR MATERIALS ARE SHOWN SUGGESTING THE POSSIBILITY OF INCREASING THE LIFETIMES OF MINORITY CARRIERS BY DESIGNING ALLOYS THAT DECREASE THE DENSITY OF STATES INSIDE A CRITICAL ENERGY AND MOMENTUM REGION. THE ... |
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