| Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates |
Feb 2013 |
46 pages |
| Authors:
Iskander G Batyrev; Chi-Chin Wu; Peter W Chung; N S Weingarten; Kenneth A Jones; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD
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 | We present efforts aimed at establishing a multiscale approach for simulating dislocations in aluminum gallium nitride ((Al)GaN) semiconductors. We performed quantum mechanical and classical molecular dynamics (MD) simulations to study the electronic and atomic structure of threading edge and screw dislocations in AlGaN, focusing on the structure of the dislocation core and the electrical activity of dislocations, and estimating dislocation velocities as a function of applied stress and temperature. We ... |
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| Gallium Nitride (GaN) High Power Electronics (FY11) |
Jan 2012 |
36 pages |
| Authors:
Kenneth A Jones; Randy P Tompkins; Michael A Derenge; Kevin W Kirchner; Iskander G Batyrev; Shuai Zhou; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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| This report covers work done for the Director's Research Initiative (DSI) on Gallium Nitride (GaN) High Power Electronics (HPE) in which GaN devices are assessed in comparison to those fabricated from silicon carbide (SiC). We show that for low power applications (less than 1500 V) GaN diodes should have a lower on-resistance, and therefore less loss, than their SiC counterparts because the critical breakdown field and electron mobility are larger. ... |
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| Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates |
Mar 2011 |
26 pages |
| Authors:
Kenneth A Jones; Anthony J Ciani; Iskander Batyrev; Peter W Chung; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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| The goal of this research was to determine if the evolution of dislocations in aluminum gallium nitride (AlGaN) films grown on aluminum nitride (AlN) substrates could be modeled with the goal of determining if there are conditions under which the films are grown so that most of the dislocations created by the mismatch are confined to regions away from the film surface where devices are fabricated. Through crystallographic modeling, we ... |
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| GaN High Power Electronics |
Feb 2011 |
36 pages |
| Authors:
Kenneth A Jones; Timothy A Walsh; Randy P Tompkins; Iskander G Batyrev; Michael A Derenge; Kevin W Kirchner; Cuong B Nguyen; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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| This report details work from the Director's Strategic Initiative (DSI) on Gallium Nitride (GaN) High Power Electronics in which GaN devices are assessed compared to those fabricated from silicon carbide (SiC). For low power applications (1500 V), GaN diodes have a lower on-resistance and less loss than their SiC counterparts because the critical breakdown field and electron mobility are larger. We expect this will also be true for high power ... |
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| Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC |
01-Jan-2007 |
9 pages |
| Authors:
Albert V Davydov; Siddarth G Sundaresan; Mulpuri V Rao; Yonglai Tian; John A Schreifels; Mark C Wood; Kenneth A Jones; GEORGE MASON UNIV FAIRFAX VA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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| Rapid solid-state microwave annealing was performed for the first time on N+-, Al+-, and B+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 deg C were attained with heating rates exceeding 600 deg C/s. An 1,850 deg C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 ... |
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