| Coordination Compounds of Aluminum as Precursors to Aluminum Nitride |
MAY 93 |
17 pages |
| Authors:
Leonard V. Interrante; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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 | Two different systems have been examined as potential sources of aluminum nitride, an important electronic and structural ceramic material. Cyclic organoaluminium amides obtained as intermediates in the thermolysis of trialkylaluminium: ammonia Lewis acid-base complexes have been used to obtain AIN powder and as precursors for the chemical vapor deposition of AIN films. The structures of two of these intermediates were determined by single-crystal XRD and the kinetics and thermodynamics of ... |
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| Studies of Thermal Decomposition of the 1:1 R(3)Al:en Adduct (R= M3, Et, en= Ethylenediamine): Synthesis and Structure of a Novel Intermediate, Al(HNCH(2)CH(2)AlMe(2))3 |
25 MAY 92 |
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| Authors:
Zhiping Jiang; Leonard V. Interrante; Daekeun Kwon; Fook S. Tham; Rudolph Kullnig; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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 | The research activity in this area has been enhanced recently by the discovery that such organoaluminum-nitrogen compounds have potential utility as precursors to aluminum nitride, a refractory ceramic material of much current interest for both electronic and structural applications. Such precursors offer the prospect of improvements in processability, by virtue of the volatility, solubility, and/or thermoplasticity characteristic of molecular systems. The factors influencing the formation of chelated monomers versus open ... |
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| Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide |
DEC 91 |
10 pages |
| Authors:
David J. Larkin; Leonard V. Interrante; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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| Substituted 1,3-disilacyclobutanes were studied as potential low temperature single-source CVD precursors to silicon carbide. These studies were carried out in a cold-wall LPCVD system maintained at a total reactor pressure of 1.0 Torr using a mass flow controlled argon carrier gas. The precursor was decomposed on resistively heated Si(100) substrates at temperatures ranging from 700 C - 1100 C. Gas chromatography-Fourier transform infrared spectroscopy and quadrupole mass spectrometry were used ... |
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| Organometallic Precursor Routes to Si-C-Al-O-N Ceramics |
15 MAY 91 |
78 pages |
| Authors:
Leonard V. Interrante; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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| This report describes the results of a research program directed at the development of improved methods for the preparation of Si-C-Al-O-N ceramics using organometallic precursors. Two main approaches were employed in these studies, (1) co-pyrolysis of homogeneous mixtures of organosilicon and organoaluminum precursors and (2) pyrolysis of specially designed, single- component precursors containing both Si and Al. Depending on the choice of precursors and the pyrolysis atmosphere employed, nanocrystalline Beta-SiC/2H- ... |
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| Synthesis, Structure and Pyrolysis of Organoaluminum Amides Derived from the Reaction of Trialkylaluminum Compounds with Ethylenediamine in a 3:2 Ration |
AUG 90 |
38 pages |
| Authors:
Zhiping Jiang; Leonard V. Interrante; Daekeun Kwon; Fook S. Tham; Rudy Kullnig; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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| The reactions of triethylaluminum and trimethylaluminum with ethylenediamine (en) in a 3:2 ratio have been studied. Heating of the initially formed 2R3Al:en and R3 Al:en adduct mixture results in the formation of RA1((HN(CH2)2NH)A1R2)2 (R = CH3 and C2H5). The structures and formation mechanisms of these two compounds, as well as their pyrolysis reactions, have been studied with H, C, A1 NMR, FTIR, MS, GC, DSC, and TGA. The methyl derivative ... |
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| Me3AlNH3 Formation and Pyrolytic Methane Loss: Thermodynamics, Kinetics and Mechanism |
15 FEB 90 |
30 pages |
| Authors:
Frederick C. Sauls; Leonard V. Interrante; Zhiping Jiang; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| The thermodynamics, kinetics, and mechanism of the reactions Me3Al + Ammonia yields Me3AlNH3 yields 1/3 (ME2AlNH2)3 + Methane in homogeneous solution were investigated by solution calorimetry, DSC, and 1H NMR rate measurements. The enthalpy for complex formation from NH3 and monomeric Me3Al in benzene was - 93kJ/mole. The observed Delta H for methane loss from the complex was -82.2 kJ/ mole. Methane loss from Me3AlNH3 was catalyzed by excess Me3Al ... |
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| Gas Phase Decomposition of an Organometallic Chemical Vapor Decomposition Precursor to A1N: (Al(CH3)2NH2)3 |
15 JAN 90 |
8 pages |
| Authors:
Carmela C. Amato; John B. Hudson; Leonard V. Interrante; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| A novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organmetallic precursor Aluminum Nitride, (Al(CH3)2NH2)3, indicate a decomposition temperature between 200 and 270 C. The mass spectrum of the precursor at 100 C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature. Keywords: ... |
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| Comparison of Isoelectronic Aluminum-Nitrogen and Silicon-Carbon Double Bonds Using Valence Bond Methods |
15 JAN 90 |
23 pages |
| Authors:
Mary M. Lyman; Leonard V. Interrante; Charles H. Patterson; Richard P. Messmer; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| Dimethyl-aluminum amide ((CH3)2AlNH2) is a postulated intermediate in the reaction between trimethyl aluminum ((CH3)3Al) and ammonia to form aluminum nitride. Results of geometry optimization calculations for (CH3)2AlNH2, H2AlNH2 and isoelectronic H2SiCH2(silaethylene) are presented. Each of these has a planar equilibrium skeleton with C(2v) symmetry. Geometry optimizations were carried out using Generalized Valence Bond Perfect-Pairing (GVB-PP) wave functions. Al=Nitrogen bond distances of 1.78 and 1.80 A are predicted for the dihydro-and ... |
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| Polymer-Derived Si3N4/BN Composites |
90 |
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| Authors:
Wayde R. Schmidt; William J. Hurley Jr.; Vijay Sukumar; Robert H. Doremus; Leonard V. Interrante; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF MATERIALS ENGINEERING
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| Partially crystalline silicon nitride, with a specific surface area greater than 200 sq m/g, is obtained by the pyrolysis of an organometallic polymeric precursor under NH3 to 1000C. Additional heating to 1400C under N2 produces alpha-Si3N4. The addition of up to 15% h-BN was found to affect the coarsening characteristics of amorphous silicon nitride by promoting surface area reduction and suppressing crystallinity. By combining Si3N4 and BN molecular and polymeric ... |
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| Preparation of Silicon Carbide/Aluminum Nitride Ceramics Using Organometallic Precursors |
90 |
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| Authors:
Corinna L. Czekaj; Michael L. J. Hackney; William J. Hurley Jr.; Leonard V. Interrante; Gary A. Sigel; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMICAL ENGINEERING
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| Solid solutions of 2H-SiC/AlN can be prepared at temperatures less than 1600 C by rapid pyrolysis ("hot drop") of mixtures of (Me3Si)(0.80) ((CH2=CH)MeSi)(1.0)(MeHSi)(0.35)(sub n) (VPS) or MeHSiCH2(sub n) (MPCS) with R2AlNH23, where R=Et, i-Bu or simply by slow pyrolysis of the precursor mixture in the case of Et2AlNH23. In contrast, slow pyrolysis of the mixtures of VPS or MPCS with I-Bu2AlNH23 yields a composite of 2H-AlN and 3C-SiC at 1600 ... |
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| Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor |
15 MAY 89 |
9 pages |
| Authors:
Wei Lee; Leonard V. Interrante; Corrina Czekaj; John Hudson; Klaus Lenz; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| Dense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor. At deposition temperatures between 700 and 800 C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(111) substate. The results of ... |
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| CVD of SiC and AlN Thin Films Using Designed Organometallic Precursors |
21 JUL 88 |
10 pages |
| Authors:
Leonard V. Interrante; Corrina L. Czekaj; Wei Lee; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| High purity, crystalline AlN and SiC thin films have been prepared by the chemical vapor deposition of (CH3)2AlN2)3 and (CH3)HSiCH2)3, respectively, at temperatures under 800 C. The use of these 'designed precursors' results in film stoichiometries of nearly one-to-one and the evolution of non-corrosive reaction by-products. In addition, no carrier gas is required. Preliminary studies of the interaction of the (CH3)HSiCH2)3 system with a clean Si(100) surface indicate interesting precursor ... |
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| Preparation of the High-Tc Superconductor YBa2Cu3O(7-x) Using Organometallic Precursors |
21 JUL 88 |
18 pages |
| Authors:
Leonard V. Interrante; Zhiping Jiang; David Larkin; RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF CHEMISTRY
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| Organic soluble precursors to the high Tc 1-2-3 superconductor, YBa2Cu3O7-x, have been prepared using polyesters derived from the interaction of citric acid (CA) or ethyl-enediaminetetraacetric acid (EDTA) with ethylene glycol. Mixtures of the nitrate, carbonate and/or acetate salts of the three metal ions with CA or EDTA and ethylene glycol were heated to obtain homogeneous green solids containing the desired 1:2:3 ratios of Y3+, Ba2+, and Cu2+ ions. Pyrolysis at ... |
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| Studies of Organometallic Precursors to Aluminum Nitride |
09 MAY 86 |
10 pages |
| Authors:
Leonard V. Interrante; Leslie E. Carpenter Ii; Christopher Whitmarsh; Wei Lee; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
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| The reaction of trialkylaluminum compounds with ammonia has been examined as a potential route to high purity AlN powder and to AlN thins films. This reaction proceeds in stages in which the initially formed Lewis acid/base adduct undergoes thermal decomposition to a series of intermediate alkylaluminum-amide and -imide species with increasing Al-N bonding, i.e., R3A1 + NH3 yields R3Al:NH3 yields AlN + 3RH (where R = CH3, C2H5, C4H9, etc.). ... |
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