Illumination of a double p - Al(0.5)Ga(0.5)As/GaAs/Al(0.5)Ga(0.5)As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a framework of the model in which deep electron traps are supposed to be located above the Fermi level on ...