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A. A. Ilyevsky


Click on the titles below to find US government-authored or -collected reports written by A. A. Ilyevsky

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Persistent Photoconductivity in P-Type Al0.5Ga0.5/GaAs/Al0.5Ga0.5As Heterostructures JUN 2001 3 pages
Authors:  W. Kraak; N. Ya. Minina; A. M. Savin; A. A. Ilyevsky; I. V. Berman; HUMBOLDT-UNIVERSITY BERLIN (GERMANY) DEPT OF PHYSICS
The full text of this report is available for sale.Illumination of a double p - Al(0.5)Ga(0.5)As/GaAs/Al(0.5)Ga(0.5)As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a framework of the model in which deep electron traps are supposed to be located above the Fermi level on ...


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