In this paper, we report the results of a recent demonstration in which a Multiple Quantum Well retromodulator array was used as a low power, lightweight means to provide optical tagging of a remotely located object. A laser diode integrated on a tracker/pointing system scanned without cueing for a modulated retroreflected beam. The retroreflected energy was received and the embedded code demodulated for tagging identification. Ranges were on the order ...
In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well (MQW) modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells (less than about 23%) better device performance and surface morphology are obtained by growing directly on GaAs. PIN MQWs with ...
In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well (MQW) modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells (less than about 23%) better device performance and surface morphology are obtained by growing directly on GaAs. PIN MQWs with ...
In this paper, the authors describe a demonstration using a Multiple Quantum Well modulator combined with an optical retroreflector that supported a high-speed, free space optical data link. Video images were transmitted over an 859-nanometer link at a rate of 460 kilo bits per second, where rate of modulation was limited by demonstration hardware, not the modulator. Reflection architectures for the modulator were used; transmission architectures also were investigated but ...
This letter deals with resonant photorefractive devices fabricated from multi-quantum wells of GaAs/Al0.3Ga.07As and operated in a quantum-confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low-temperature Al0.3Ga.07 was used as an insulator to form metal-insulator-semiconductor structures on both sides of the multi-quantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing ...
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