This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0-150 deg C range. The changes with temperature for transconductance (gm), output impedance (C(ds) and R(ds)), feedback capacitance (C(dg)), input capacitance (C(gs)), and gate resistance (R(g)) are measured. The variations with temperature are established for g(m), C(ds), R(ds), C(dg), C(gs), and R(g) in the GaN technology. This information is useful for MMIC designs.
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