Gallium arsenide, gallium phosphide, gallium antimonide, and indium phosphide have been transported and deposited, with controlled doping, either as large crystallites when seeded on the walls of the tube, or as epitaxial layers when deposited on seed crystals. Material was transported simultaneously from different compounds and deposited as a ixed compound, e.g. Ga(As,P). Compounds were synthesized from the elements and deposited, e.g. GaP. P-n junctions, including low-current-density tunnel junctions, were ...
Hump tunnel currents and associated trapping effects which are observed in GaAs tunnel diodes contaminated with impurities such as Mn, Cu, and Au are described. The relationship of these effects to l/f noise is indicated. Halogen vapor transport and epitaxial growth of GaAs and GaAs space charge limited emission diode are described. The halogen vapor transport, synthesis, and epitaxial growth of GaP on GaP and GaAs is also described. (Author) ...
A description is given of a simple means of masking against epitax al GaAs crystal growth on a GaAs seed. The properties of manganese-doped GaAs tunnel diodes are described. An allgermanium-doped GaAs tunnel diode and its properties are described. The dependence of hump tunnel currents upon minority carrier injection in a variety of tunnel diodes is outlined. Some of the measured properties of manganese-doped GaAs are presented. (Author)
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