Tetraethyl orthosilicate (TEOS) was used as a silicon source to grow SiO2 films in a modulated electron beam generated plasma enhanced chemical vapor deposition (PECVD) arrangement. Process parameters investigated were: substrate temperature, gas composition, duty factor, and incident ion energy. At high temperatures (150 C), film compositions were less sensitive to the process parameters, while at lower temperatures, the film chemistries varied greatly. Activation energies of -0.122 eV and -0.020 ...
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