In this program we used molecular beam epitaxy (MBE) to create epitaxial metal-semiconductor structures containing embedded metallic nanoparticles, metallic epitaxial films and epitaxial metal-semiconductor junctions. We incorporated epitaxial metallic nanoparticles of erbium arsenide and erbium antimonide in GaAs, InOaAs and GaSb structures by molecular beam epitaxy. The metallic nanoparticles in semiconductors produced: (1) electrical doping of semiconductors, (2) electron/hole recombination enhancement, (3) electron/hole tunnel junction enhancement. (4) thermal conductivity control, ...
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