Basic investigations in the residual gas contamination during sputtering and oxidation mechanism have yielded information that contributes to increased process control. Also, the oxidation experiments depict a structure that can be modified to aid in temperature coefficient of resistance control. A process control investigation for fabricating 1000 ohms/sq resistors and >0.35 pF/sq mil capacitors on the same silicon substrate has been completed. The results show the yield for the 1000 ...
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