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D. Flandre


Click on the titles below to find US government-authored or -collected reports written by D. Flandre

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Gate-All-Around Devices and Circuits JUL 93 85 pages
Authors:  J. P. Colinge; P. Francis; J. P. Eggermond; D. Flandre; X. Baie; UNIVERSITE CATHOLIQUE DE LOUVAIN LOUVAIN-LA-NEUVE (BELGIUM)
The full text of this report is available for sale.The goal of this research activity is to improve the GAA technology, to apply it to the fabrication of CMOS circuits and to assess the radiation hardness of the devices. The test vehicle is a 1k SRAM which has to be demonstrated by September 1994. In the first year of activity, we have worked on the following topics: assessment of the pre-rad and post-rad characteristics of the transisters, improvement of ...


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