Atomic layer deposition was employed to deposit relatively thick ( 30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The obtained films show excellent morphology and uniformity over large ( 64 mm2) areas ...
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