Results from the chemical stain etch fabrication and analysis of thin-film photoluminescent porous silicon on sapphire substrates are presented. The transparent sapphire substrate allows the excitation and collection of the luminescence at either the front or back of the wafer. Morphological differences found using scanning electron microscopy between porous SOS and porous bulk silicon are attributed to preferential etching of threading dislocations. This is confirmed by an observed stress relaxation ...
Reports by Author
