The authors describe high-brightness, broad area midinfrared semiconductor lasers. These devices were fabricated in the authors laboratory using a commercial solid-source molecular beam epitaxial system. The laser structures incorporated 14 type-II quantum wells embedded in thick waveguide/ absorber regions composed of In0.2Ga0.8As0.18Sb0.82. The optically pumped devices achieved higher brightness operation as unstable resonators. Each unstable resonator was realized by polishing a diverging cylindrical mirror at one of the facets. For ...
We describe high-brightness, broad-area mid-IR semiconductor lasers. The optically pumped devices achieved higher brightness operation as unstable resonators. Each unstable resonator was realized by polishing or etching a diverging cylindrical mirror at one of the facets. For several mid-IR unstable resonator devices experimental near- and far-fields near threshold are shown, as well as at many times threshold. For an unstable resonator semiconductor laser operating at 4.6 micrometer and at a ...
We report a comparative study on the performance of three optically pumped, type-II quantum well lasers with differing quantum well (QW) confinement. One of the active regions emphasized hole confinement, another emphasized electron confinement, while the third incorporated both electron and hole confinements. In all cases the wells were inserted in a thick In(sub x)Ga(sub 1-x)As(sub y)Sb(1-y) waveguide/absorber region. The lasing wavelengths at 84 K were 2.26, 3.44, and 2.37 ...
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