Rapid solid-state microwave annealing was performed for the first time on N+-, Al+-, and B+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 deg C were attained with heating rates exceeding 600 deg C/s. An 1,850 deg C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 ...
"The Science in Science Fiction's Artificial Men," by Dr. Dawn MacIsaac and Dr. Kevin B. Englehart -- This article describes the work and progress bioengineers are striving to accomplish in the study and production of electronically powered artificial limbs, noting that Luke Skywalker's functional artificial hand could be a near-future reality. "A Brighter Future from Gallium Nitride Nanowires," by Dr. Kris A. Bertness, Dr. Norman A. Sanford, and Dr. Albert ...
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