The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The ...
The problems involved in the preparation of single crystals of refractory insulating materials are briefly outlined. The current status of the preparation of insulating crystals by the electron beam heated floating-zone method is reviewed, and the disadvantages are noted. The conception, construction and test of a new electron beam optics are described, and the advantages are pointed out. Sapphire, ruby and tungsten rods were zoned in testing the new optics. ...
The report describes the design, installation, calibration and test of one of the high temperature crystal growing furnace systems of the Solid State Sciences Laboratory of the Air Force Cambridge Research Laboratories. A number of the modifications and innovations that make this system unique are described. Pictures and diagrams of the furnace and associated apparatus and component specifications are sufficiently complete to provide substantial aid in the operation or duplication ...
Reports by Author
