| THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE. |
MAR 1965 |
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| Authors:
P. K. Weimer; H. Borkan; J. J. Bowe; V. L. Frantz; R. S. Hopkins Jr.; RCA LABS PRINCETON NJ
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 | The effect of substrate temperature and deposition rate on the surface topology and crystallite size of CdS films has been studied by electron microscopy. Hall mobility and resistivity of CdS films have been determined as a function of temperature for various evaporation, processing, and over-coating procedures. Capacitance-voltage data on metal-insulator-CdS capacitors are being taken in conjunction with bias-temperature treatments in order to investigate sources of insulator instability. High-temperature materials are ... |
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| THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE. |
JAN 1965 |
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| Authors:
P. K. Weimer; J. J. Bowe; V. L. Frantz; W. H. Laznovsky; R. L. Schelhorn; RCA LABS PRINCETON NJ
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| The microstructure and electrical characteristics of cadmium sulfide films were studied as a function of substrate temperature, film thickness, and deposition rate. Physical factors which were examined included film stress, film roughness, crystallite size, and degree of preferred orientation. Electrical properties studied included Hall mobility, resistivity, and performance in TFT structures. A simple electrical method of measuring the semiconductor doping density in thin-film structures was devised. TFT's using indium antimonide ... |
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| FIELD EFFECT AND SPACE-CHARGE-LIMITED THIN FILM TRIODES. |
30 APR 1964 |
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| Authors:
J. J. Bowe; W. H. Laznovsky; F. V. Shallcross; J. T. Wallmark; D. K. Weimer; RAYTHEON CO WALTHAM MA
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| Shelf and operational life tests continued. Vacuum and selenium encapsulated TFT units now show a stability equivalent to that of germanium transistors. A study has been made of various phases of instability which occur in encapsulated thin-film transistors when bias is applied. It has been found that the channel conductivity decreases for positive gate bias and increases for negative gate bias. A steady-state conductivity is reached after about four hours ... |
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| FIELD EFFECT + SPACE-CHARGE-LIMITED THIN FILM TRIODES. |
30 JAN 1964 |
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| Authors:
J. J. Bowe; W. H. Laznovsky; F. V. Shallcross; P. K. Weimer; RADIO CORP OF AMERICA CAMDEN NJ DEFENSE ELECTRONIC PRODUCTS
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| Work was performed on thin-film transistors of the field effect type, both from a device viewpoint and from a materials aspect. Emphasis was placed on an intensive study of the shelf and operating lives of CdS thin-film transistors, with a view toward isolating and identifying the failure mechanisms and the technological factors contributing to the failure. (Author) |
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| FIELD EFFECT AND SPACE-CHARGE-LIMITED THIN FILM TRIODES. |
30 OCT 1963 |
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| Authors:
J. J. Bowe; W. H. Laznovsky; F. V. Shallcross; A. Waxman; P. K. Weimer; RAYTHEON CO WALTHAM MA
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| Work was performed on thin film structures for space-charge-limited current devices and on thin film unipolar field effect transistors of cadmium sulfide. The results of experiments to study devices in structures in which space-chargelimited current mechanisms are employed are reported. No space-charge-limited triode operation was observed. The relative roles of field effect and space charge limitation are not unequivocally separated in this structure. An analysis is presented comparing the properties ... |
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