| Joint Services Electronics Program |
20 SEP 2000 |
16 pages |
| Authors:
Jeffrey Bokor; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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 | This is the final technical report for the Berkeley JSEP, Program. As of July 31, 1998, all of the work units in the program were terminated except for one - "Quantum Computation: Exploring a Novel Computational Paradigm" which is led by Prof. Umesh Vazirani. In this final report, a summary description of each of those work units that terminated in 1998 is given, as well as an up to date ... |
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| Long-Wavelength Vertical Cavity Lasers with Air/Semiconductor Mirrors: Nanoscale Gate Technology for Silicon MOSFETS |
JUL 2000 |
4 pages |
| Authors:
Jeffrey Bokor; Nick Lindert; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| We have investigated methods to improve sub-100 nm MOSFET performance. We discovered that Poly-SiGe has very attractive qualities when used as the transistor gate material. Poly-SiGe offers less boron penetration, less poly depletion, and higher hole mobility. Dynamic Threshold MOSFET (DTMOS) techniques were also investigated to allow for improved inverter drive current over a broader range of supply voltages. We applied these techniques to various ... |
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| Fabrication of Sub-5nm Silicon Nano-Wires and Nano Devices |
28 MAR 2000 |
5 pages |
| Authors:
Jeffrey Bokor; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| A reproducible process for fabricating silicon nanowires down to 4nm in diameter has been developed. The process, as described in previous reviews, relies on the stress limited oxidation of a thin silicon line. The initial line is fabricated by patterning an SOI wafer using electron beam lithography and a NiCr lift-off process. The post-oxidation wire was found to be very sensitive to crystallographic orientation of the ... |
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| Advanced Silicon FET Physics and Device Structures |
23 DEC 1998 |
7 pages |
| Authors:
Chenming Hu; Jeffrey Bokor; CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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| The objectives of the project were to develop experimental techniques for characterizing the transport and hot carrier phenomena in advanced MOSFETs, to investigate the limits of gate oxide scaling, to develop engineering models for the relevant physical effects, and to incorporate the results in device simulators and in MOSFET models for circuit simulations. All the objectives have been met. |
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| Femtosecond Laser Probing of Non-Thermal Electronic Transport. AASERT program |
30 SEP 97 |
53 pages |
| Authors:
Jeffrey Bokor; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| The goal of this research effort has been the application of high intensity THz pulses, generated by a large aperture planar photoconducting transmitter, in studying nonlinear phenomena in GaAs and Si. The ultimate interest in this is a better understanding of the response of free carriers in semiconductors to high electric fields, a subject of great importance in modern electronic devices. The THz generator offers the capability of producing a ... |
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| JSEP Augmentation Proposal: Velocity Overshoot in Silicon Inversion Layer |
31 AUG 97 |
4 pages |
| Authors:
Jeffrey Bokor; Chenming Hu; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| The transport properties of carriers in the inversion layer was studied by using the thick-gate uniform channel field MOS transistor. Using devices with sub-100nm channel lengths, we performed an extensive investigation of ballistic transport in inversion layer under uniform field condition. We experimentally address the effect of a wide range of parameters on the high- field transport of Inversion layer electrons and holes. Our findings point to electron velocity overshoot ... |
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| Joint Services Electronics Program |
31 JUL 93 |
17 pages |
| Authors:
Jeffrey Bokor; Michael A. Lieberman; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| This report summarizes the research activity supported by the Joint Services Electronics Program at the Electronics Research Laboratory for the period June 1990 to June 1993. It includes the Director's overview, a listing of principal investigators, degrees awarded to students and a list of publications and presentations. The research was organized into three themes during this period: Quantum Electronic Devices, Semiconductor Electronic Devices, and Neural Networks and Applications. Significant advances ... |
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| OSA Proceedings of the Topical Meeting on Soft-X-Ray Projection Lithography Held in Monterey, California on 10-12 April 1991. Volume 12 |
22 MAY 92 |
158 pages |
| Authors:
Jeffrey Bokor; Jarus W. Quinn; OPTICAL SOCIETY OF AMERICA WASHINGTON DC
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| The OSA Topical Meeting on Soft-X-Ray Projection Lithography was organized to bring together researchers working on these diverse issues. The meeting was held April 10-12, 1991, at the Monterey Conference Center in Monterey, California. As these proceedings show, significant progress is being made in all of the research fronts, but much remains to be done in order to overcome the difficult, yet exciting, challenges that lie ahead. A new approach ... |
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