Photoionization spectroscopy has been carried out in bias-stressed AlGaN=GaN high electron mobility transistors (HEMTs) grown by Molecular Beam Epitaxy (MBE) to probe the nature of the deep trapping centers responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by Metal Organic Chemical Vapor Deposition (MOCVD) is responsible for induced collapse in MBE-grown structures.
Current collapse is observed to be induced in AlGaN/GaN high-electron-mobility transistors as a result of short-term bias stress. This effect was seen in devices grown by both metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). The induced collapse appears to be permanent and can be reversed by SiN passivation. The traps responsible for the collapse have been studied by photoionization spectroscopy. For the MOCVD-grown devices, the same traps cause ...
Modulating retro-reflectors "MRR" couple passive optical retro-reflectors with electro-optic modulators to allow free-space optical communication with a laser and pointing/acquisition/tracking system required on only one end of the link. In operation a conventional free space optical communications terminal, the interrogator, is used on one end of the link to illuminate the MRR on the other end of the link with a cw beam. The MRR imposes a modulation on the ...
Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to ...
Deep traps responsible for current collapse phenomena in GaN metal semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at ...
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