The central goal of this project has been the achievement of low defect density GaAs heteroepitaxy on Si by growing mesas with free side walls. Several approaches were used singly and in combination in attempts to guide misfit dislocations (MDs) to the GaAs mesa edges and minimize threading dislocation (TD) densities. Methods included the use of Si pedestals with concave sidewalls, interposed plastically-soft ZnSe buffer layers, graded- composition InGaAs strained ...
The symposium was devoted to those topical areas evolving from the subject of laser annealing. The material covered in this symposium has three distinct foci. First is the field of sub-microsecond (to femptosecond) interactions of energy beams with solids and the resultant material changes on similar time scales. Issues of energy transfer, internal equilibration, solid phase regrowth of amorphized layers, ultrarapid quenching of amorphous semiconductors dominate this topic. A second ...
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