Experiments were carried out in conjunction with the study of arsine doping, CO2 in situ oxide film growth, and oxidemasked growth. The furnace with rotating susceptor was re evaluated with much more favorable results than previously obtained. Capacitance probe measurement has proven a very valuable technique, useful for the study of layer doping profile, isolation junctions and back diffusion in epitaxial layers for digital circuits has been obtained, and a ...
Continuous improvement in substrate surface preparation has been achieved. A study of temperature and deposition rate effects on epitaxial layer doping in SiCl4-AsCl3 and SiCl3 and SiCl4-B2H6 systems was conducted. Work on oxide masked epitaxial growth in selected areas has been resumed. An infrared transmission technique was set up to detect microcracks in silicon substrates and epitaxial wafers. Facility to determine epitaxial layer resistivity by ac, dc and dc-pulse three ...
Process improvement has been continued in layer resistivity and thickness control for specific epitaxial layers with graded resistivity tailored for microelectronic integrated digital circuit application. An epitaxial furnace with a rotating susceptor and an internal RF coil was evaluated. A three point probe breakdown voltage technique was evaluated as a means for measuring layer resistivity. A stacking fault etch pit technique was introduced for the measurement of layer thickness. Structural ...
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