A proximity effect correction program implementing the self- consistent correction algorithm has been developed. The program calculates recommended electron beam exposures given as input, the pattern to be written and the beam scattering parameters. Predicted dose patterns resulting from the recommended exposures are also calculated. Results of sample calculations are shown. (Author)
High quality annealing of boron implanted silicon 10 to the 15th power/sq cm, 50 keV) was achieved using commercially available quartz xenon flash tubes after a 20 second preheat. Electrically active dopant profiles, obtained from spreading resistance profiles, indicate that the annealing proceeded by solid phase epitaxy. We also find that the degree of boron redistribution can be controlled by the cumulative exposure to the flash. Characteristics of the apparatus ...
Annealing of boron-implanted silicon by a single 15-microsecond pulse from a flash lamp has been observed. The required energy density was 27 joules per square centimeter incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples. (Author)
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