In this report the growth, processing, fabrication, and characterization of HgCdTe (or mercury cadmium telluride [MCT]) infrared (IR) detectors for advanced target detection are reported. The material was grown by solid source molecular beam epitaxy (MBE). Grown materials were characterized prior to processing to obtain information on carrier concentration, mobility and resistivity. Inductive coupled plasma (ICP) etching and metallization as required by the design of the sensors at different levels ...
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