InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers. At 77 K and 4.7 V bias the responsivity was 14 mA/W and the detectivity, D(*), was 10(exp 10) cm Hz (sup 1/2)/W.
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