Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions (HJs) are obtained. Their electrical properties are studied. The Current-Voltage Characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of C(exp -2) (V) curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best ...
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