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Abstract:
The objective of this program was to develop large-area, flat-panel detectors for digital mammography using CdTe or CdZnTe deposited by metalorganic chemical vapor deposition (MOCVD) directly on thin-film transistor (TFT) active matrix arrays for image readout. CdTe and CdZnTe have the potential to meet the requirements for digital mammography due to their high x-ray absorption, large bandgap and good carrier transport. After four years of intensive work, we were able to deposit the key detector film on crystalline silicon multiplexors and TFT arrays, maintaining the integrity of underlying electronics in both cases and proving the possibility of the proposed technology. Unfortunately, CdZnTe thin films were never realized with electrical properties equal to bulk grown CdZnTe, and functioning detectors could not be obtained.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 26 Sep 1996-25 Dec 2000 |
| Pages: |
65 |
| Report Date: |
JAN 2001 |
| Contract Number: |
DAMD17-96-C-6086 |
| Report Number: |
A991093 |
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Keywords relating to this report:
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