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Abstract:
Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.
| Description: |
Patent, Filed 25 Feb 93, patented 13 Sep 94 |
| Pages: |
4 |
| Report Date: |
13 SEP 1994 |
| Report Number: |
D952710 |
Report Unavailable |
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