|
Abstract:
This is a summary of results from a program aimed at studying the atomic structure of semiconductor surfaces using scanning tunneling microscopy (STM). The bulk of the research concerned the epitaxial growth of metals on the (111) and the (100) surfaces of silicon, with particular emphasis on the metals indium and gallium. The STM images provided structural information on all of the metal-induced surface reconstructions in these systems as well as information on the general behavior of the metals on the Si surface, yielding insight into metal mobility, the effect of stepped substrates, and the nucleation of metal growth on the surface. In addition to the semiconductor surface work, there has been some studies of the epitaxial growth of metals on Au(111), and the surface structure of the high temperature superconductor Bi2Sr2CaCu2O8+8. Keywords: Semiconductor surfaces, Scanning tunneling microscopy, Silicon, Metal surfaces, Epitaxial growth, Superconductors. (JES)
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 1 Apr 87-30 Sep 89 |
| Pages: |
12 |
| Report Date: |
MAY 90 |
| Contract Number: |
N00014-87-K-0679 |
| Report Number: |
A933322 |
|
|
|
|
|
Keywords relating to this report:
Email This Abstract
