Abstract: We explore the basic science issues and device potential of our carbon nanotube-silicon (CNT-Si) heterojunctions for infrared photodetection. We focus on the underlying mechanism of infrared photocurrent response, which is elucidated by a detailed study of the dependence of the photocurrent on modulation frequency and intensity of the incident infrared radiation. The photocurrent generation is ascribed to the formation of the CNT-Si heterojunction, rather than the thermal gradient in the structure. The potential detectivity of the CNT photodiode is evaluated by considering the Auger recombination rate limit and found to be several thousand times greater than HgCdTe. The infrared photo-detection capability of the CNT-Si heterojunction is demonstrated by a comparison between the experimental photo-responses from Si and the carbon nanotubes. With the help of analytical formulas and simulation tools, we also investigate the temperature dependence of the 1D-3D hetero-dimensional CNT-Si heterojunction. These findings establish a basic understanding of this unique hetero-dimensional junction system and will help guide further development, design, and optimization.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final rept. 27 Sep 2006-26 Sep 2008 |
| Pages: |
17 |
| Report Date: |
05-Dec-2008 |
| Contract Number: |
W911NF-06-1-0480 W911NF0610480 |
| Report Number: |
A894005 |
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