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Abstract:
A charge coupled device (CCD) camera's performance has been degraded by damage produced by 14 MeV neutrons (n) from the Rotating Target Neutron Source. High energy neutrons produce atomic dislocation in doped silicon electronics. This thesis explores changes in Dark Current (J), Charge Transfer Inefficiency (CTI), and Contrast Transfer Function (CTF) as measures of neutron damage. The camera was irradiated to a fluence, Phi, of 6.60 x 10 (exp 12) n/ cm2. The camera temperature was lowered from room temperature to 267 K at a fluence of 4.7 x 10 (exp 11) n/cm2 to preclude saturation of the camera picture. With temperature compensations, J increased linearly with Phi. Four data points for J, CTF (ideal of 1.0), and CTI (ideal of 0.0) are given. Neutron irradiation significantly degraded the CCD camera performance; however, operating the camera at lower temperatures significantly reduces the effects. Damage thresholds for fluences greater than 6.60 x 10 (exp 12) n/cm2 and for all temperatures can be extrapolated from the results of this work.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Master's thesis |
| Pages: |
52 |
| Report Date: |
SEP 1997 |
| Report Number: |
A873933 |
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