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Electronics and FluidicsElectrooptical and Optoelectronic Devices

All Ultra-High Vacuum In-Situ Growth & Processing Approaches to Realization of Semiconductor Nanostructure Arrays

Authors: Anupam Madhukar; Ping Chen; UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING
Abstract:
This Final Technical Report summarizes the most important accomplishments resulting from the work on semiconductor quantum wire and box synthesis and optical characterization carried out under the above noted grant. These accomplishments included: (1) Creation of GaAs/AlGaAs quantum wires and boxes via purely growth control on appropriately patterned mesas on GaAs(001) and GaAs(111) substrates, (2) Demonstration of their high optical quality, including the first time-resolved cathodoluminescence studies, (3) Demonstration of focused ion beam assisted Cl2 etching of GaAs(001) to create mesa stripes for subsequent size-reducing growth on such mesas for realization of quantum wires, (4) Demonstration of vertically self-organized growth of coherent 3D strained InAs on GaAs island quantum dots, and (5) Demonstration of the first quantum boxes laser based upon such quantum dots.

Limitations: APPROVED FOR PUBLIC RELEASE
Description: Combined technical progress 1 Jan-31 Dec 93; Final technical rept. 1 Jun 93-31 Dec 96
Pages: 12
Report Date: 15 MAY 1997
Contract Number: DAAH04-93-G-0231
Report Number: A856443
Keywords relating to this report:
*ARRAYS
*SEMICONDUCTORS
*ULTRAHIGH VACUUM
ALUMINUM GALLIUM ARSENIDES
CATHODOLUMINESCENCE
EPITAXIAL GROWTH
GALLIUM ARSENIDES
ISLANDS
LASERS
OPTICAL PROPERTIES
PROCESSING
QUANTUM DOTS
QUANTUM THEORY
QUANTUM WIRES
SELF ORGANIZING SYSTEMS
SYNTHESIS
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