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Abstract:
The results of a program of theoretical research to determine the relative importance and dynamics of various elementary processes occurring in the chemical vapor deposition (CVD) of silicon from silane are reported. The processes studied include the gas-phase unimolecular dissociation of SiH4, Ch4, and SiH2, the homogeneous three-body recombination of Si atoms, surface adsorption and diffusion of Si atoms on Si(100) and Si(111) surfaces, and the recombination and desorption of H2 on silicon surfaces. In addition, several studies involving the reaction dynamics of van der Waals molecules are described. We also report the development of a quantum mechanical method for computing the results of elastic and inelastic atomic scattering from surfaces. (Author)
| Description: |
Final rept. 1 Sep 82-31 Aug 85 |
| Pages: |
20 |
| Report Date: |
31 AUG 85 |
| Contract Number: |
AFOSR-82-0311 |
| Report Number: |
A845261 |
Report Unavailable |
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