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Abstract:
The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X. The entire structure is strain-free because the lattice-matched Ge and Ge0.76Si0.19Sn0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Journal article |
| Pages: |
5 |
| Report Date: |
2007 |
| Report Number: |
A843174 |
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Keywords relating to this report:
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