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Abstract:
Heterostructures formed from III-V semiconductors with the 6.1 lattice spacing InAs, GaSb, AlSb and related alloys have attracted significant interest because of their potential to define a new state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 -based devices that have the potential to revolutionize infrared optoelectronics and low-power high-speed electronics.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Conference paper |
| Pages: |
11 |
| Report Date: |
Jan 1999 |
| Report Number: |
A804484 |
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