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Abstract:
Some highlights of the research program in the areas of radiation damage, ion implantation, magnetic resonance and light emitting devices are qualitatively discussed. The radiation damage program is discussed with emphasis on the basic defect studies in electron irradiated semiconductor II-VI compounds. The ion implantation program discusses numerous possibilities for the fabrication of electronic devices from semiconductor II-VI compounds. The electrical and optical properties of ion implanted ZnSe are reported, and its suitability as surface contact injection devices, p-n junctions, light emitting diodes, and switching and memory devices is discussed. The report also concerns research on the optical and electrical properties of AgGaS2. Crystals were grown and were found upon analysis to possess the chalcopyrite structure. The lattice parameters of these crystals are evaluated.
| Description: |
Final rept. 1 Jul 64-30 Jun 74 |
| Pages: |
51 |
| Report Date: |
FEB 1975 |
| Report Number: |
A737800 |
Report Unavailable |
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