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Abstract:
We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 (^ 1 micro W ) and 3 THz (^1 nW). To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown (200 deg C) GaAs epilayer. Two Ti:Sapphire laser beams (^ 30 mW) focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Pages: |
4 |
| Report Date: |
29 SEP 2000 |
| Contract Number: |
N0001340011104 |
| Report Number: |
P737110 |
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