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Electronics and FluidicsElectrooptical and Optoelectronic Devices

Selected Area Epitaxy Applied to Optical Cross Point Switch Technology

Authors: P. D. Dapkus; UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF COMPUTER SCIENCE
Abstract:
A program of research to develop technology for WDM switching technology is described. The initial approach was to involve the use of selective area epitaxy to fabricate an amplifier based monolithic switching platform. Significant progress was made towards that goal. During the course of the program, however, an opportunity to exploit new approaches with improved characteristics was conceived and the program goals shifted in that direction. The research involves the exploration of heterogeneous integration techniques for the realization of microresonator-based switches. The basic technology approach was demonstrated in passive microresonator filters and then applied to the demonstration of an active switch. High contrast (> 10:1) switches were demonstrated. A path to the creation of VLSI WDM photonic switch fabricated was demonstrated.

Limitations: APPROVED FOR PUBLIC RELEASE
Description: Final rept. 19 Dec 1996-20 Oct 2000
Pages: 150
Report Date: 16 NOV 2001
Contract Number: F19628-97-C-0012
Report Number: A704604
Keywords relating to this report:
*EPITAXIAL GROWTH
*Optical switching
INTEGRATED CIRCUITS
PHOTONS
SEMICONDUCTOR LASERS
VERY LARGE SCALE INTEGRATION
WAVELENGTH DIVISION MULTIPLEXING
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