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Abstract:
Notre Dame has demonstrated the first gallium arsenide (GaAs)-based metal-oxide-semiconductor field-effect-transistor (MOSFET) utilizing a native oxide gate dielectric which has excellent microwave frequency performance and, due to its low gate leakage, promises both low-power operation and potential for superior power amplifier devices. We have shown that the wet-thermal native oxides of the compound semiconductor indium aluminum phosphide (InAlP) can be scaled to thicknesses required for devices (10- 20 nm) and still maintain their excellent electrical insulating properties and electrically-clean interfaces, making them well-suited for MOS electronic devices. Applications include reduced power consumption, enhanced performance electronic devices (both lowpower and high-power amplifiers) to extend battery life of portable or remotely-powered wireless communications equipment, of great potential interest to the military.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Description: |
Final technical rept. 1 May 2001-30 Apr 2005 |
| Pages: |
67 |
| Report Date: |
02 MAR 2006 |
| Contract Number: |
F496200110331 |
| Report Number: |
A681944 |
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