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Abstract:
The near band edge photocurrent structure of Class I CdS crystals was investigated near 77 K and 295 K by use of double beam illumination techniques. Changes in the photocurrent structure as a consequence of heat treatment, infra-red illumination and oxygen backfill were measured. At 98 K, quenching of the photocurrent near 5000 Angstrom observed in a virgin crystal changed into photocurrent maxima after heat treatment to 175 C. At room temperature, the near band edge quenching remained even after heat treatment to 175 C. Visible and infra-red excitation ranging from 0.6 micro m to 1.5 micro m always strongly quenched the near band edge photoconductivity maxima but had considerably less influence on the intrinsic photocurrent. The currently-used model to explain Class I properties is expanded to include the influence of the space-charge region in which the photocurrent flows and an acceptor-level with multiply charged energy states. (Author)
| Description: |
Status rept. no. 15, 1 May-31 Jul 74 |
| Pages: |
31 |
| Report Date: |
31 JUL 1974 |
| Contract Number: |
N0001471C0169 |
| Report Number: |
A671960 |
Report Unavailable |
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