Effects of EMP Testing on Semiconductor Long Term Reliability.

Authors: Sherwin R. Kahn; IIT RESEARCH INST CHICAGO ILL

Abstract:

The objective of this research effort has been to determine the long-term reliability effects of pre-stressing semiconductor devices with EMP-like transients. This study was conducted by subjecting large sample lots (approximately 100 per lot) of the JAN 2N918 transistor and the JAN-TX IN914 diode to these electrical transients at a large and a small fraction of the nominal Wunsch damage level for each device. These pre-stressed devices together with an un-stressed control lot were then life tested at a junction temperature of 300 C for a continuous 1280 hour period. The effects of EMP pre-stressing on the reliability of these devices were then assessed by comparing the observed failure rates of the various sample lots under these accelerated life test conditions. (Author)

Description:

Final rept. 1 Apr 76-31 Oct 77

Pages:

Report Date:

NOV 1977

Contract Number:

DNA00176C0243

Report Number:

A654160

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Keywords relating to this report:

*ELECTROMAGNETIC PULSES

RELIABILITY_ELECTRONICS_

SEMICONDUCTOR JUNCTIONS

THERMAL STRESSES

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