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Abstract:
We prepared photovoltaic devices featuring a PEDOT:PSS hole transport layer and three individually deposited PbSe QD layers. The PbSe photovoltaic devices incorporating the PEDOT:PSS layer exhibited enhanced AM1.5 PCEs relative to those of devices lacking the hole transport layer, with an enhancement factor of 60%. The roughness of the interface between the PEDOT:PSS and PbSe QD layers was almost three times less than that of the original ITO-PbSe QD interface, as measured using X-ray reflectivity. Hence, the presence of the PEDOT:PSS layer not only provided a smoother interface between the PbSe QD layers and the ITO substrate but also resulted in enhanced open-circuit voltages. In addition, the presence of the PEDOT:PSS hole transport layer prolonged the life time, as measured in terms of the time required to reach 80% of the normalized efficiency, of the PbSe QD solar device by six-fold, suggesting that this approach improves the performance of PbSe QD photovoltaic devices.
| Limitations: |
 APPROVED FOR PUBLIC RELEASE |
| Pages: |
14 |
| Report Date: |
25 Aug 2010 |
| Contract Number: |
FA23860914039 FA23860914039 |
| Report Number: |
A642725 |
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